Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves

The galvanostatic charge–discharge (GCD) behaviour of silicon (Si) is known to depend strongly on morphology, cycling conditions and electrochemical environment. One common method for analysing GCD curves through differential capacity, but the data processing required necessarily degrades results. Here we present a extracting empirical information from delithiation step in Si at C-rates above equilibrium conditions. We find that function able quickly accurately determine best fit historical half-cell amorphous nanowires thin films, analysis results reveals capable distinguishing capacity contributions Li3.5Si Li2Si phases total capacity. can also pick up small differences phase different samples, making it powerful technique further literature. was used predicting size reservoir effect (the apparent amount Li remaining electrode), useful determining voltage slippage related phenomena. This work presented as starting point more in-depth data.